Dr. Hannes MähneX-FAB Dresden GmbH & Co. KG
Dr. Hannes Mähne
Advantages of the XFAB SONOS technology for the design of highly reliable and cost effective embedded non-volatile memories
X-FAB SONOS non-volatile memory technology is a so called charge trap semiconductor memory technology used in the creation of non-volatile flash memory. The technique differs from the more conventional floating-gate technology that it uses a silicon nitride film to store electrons, rather than the doped polycrystalline typical of a floating-gate silicon structure. This approach allows to reduce manufacturing costs due to fewer process steps are required to form a charge storage node, significantly lower programming and erasing voltages can be used, improved reliability and high yield, as the charge trap is less susceptible to point defects in the tunnel oxide layer.