Dr. Artur Erbe

Group Leader Helmholtz-Zentrum Dresden-Rossendorf

Nanostructures for electronic sensors

The use of novel materials and structures in semiconductor devices opens up possibilities for a huge range of applications. For some years now, special focus has been on scaling the structures into the nanometer range, which on the one hand drastically increases the information density and on the other hand increases the sensitivity to changes in the environment enormously. Typical examples of such nanoelectronic devices are field-effect transistors based on semiconductor nanowires or so-called two-dimensional materials. With these materials, for example, highly sensitive bio- and gas sensors can be developed, which also respond very selectively to only certain substances.

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