Andre Bonnardot


MBE-grown GaN-on-Si HEMTs show remarkable results at 40 GHz, an opportunity for mmWaves mobile applications

I propose to present: market opportunity of GaN-on-Si for RF, technical challenges of GaN-on-Si synthesis especially for mmWave applications, our solution using NH3-MBE epitaxy & results obtained @40 GHz. Depending on time : next steps in R&D and path toward mass production for volume & cost sensitive market (mobiles & picocells) using MBE RIBER 300 mm clusters. Value for participants : get to know an alternative solution for GaN for RF applications and gain understanding about MBE possibilities for nitride compounds on silicon.

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